Collective effects of interface roughness and alloy disorder in InxGa1-xN/GaN multiple quantum wells
Identifieur interne : 015B67 ( Main/Repository ); précédent : 015B66; suivant : 015B68Collective effects of interface roughness and alloy disorder in InxGa1-xN/GaN multiple quantum wells
Auteurs : RBID : Pascal:98-0398708Descripteurs français
- Pascal (Inist)
- 7320M, 7340K, 7866F, 7855C, 7135, 6835C, 7320D, 8530V, Etude expérimentale, Etude théorique, Gallium nitrure, Indium nitrure, Interface, Rugosité, Photoluminescence, Exciton, Hétérojonction, Recombinaison, Indium composé, Gallium composé, Semiconducteur III-V, Semiconducteur bande interdite large, Etat interface, Structure interface, Topographie surface, Puits quantique semiconducteur.
English descriptors
- KwdEn :
- Excitons, Experimental study, Gallium compounds, Gallium nitrides, Heterojunctions, III-V semiconductors, Indium compounds, Indium nitrides, Interface states, Interface structure, Interfaces, Photoluminescence, Recombination, Roughness, Semiconductor quantum wells, Surface topography, Theoretical study, Wide band gap semiconductors.
Abstract
The collective effects of alloy disorder and interface roughness on optical properties of InxGa1-xN/GaN multiple quantum wells (MQWs) have been studied. The results are compared with those of GaN/AlGaN MQWs and InGaN epilayers. InxGa1-xN/GaN MQWs emit a broad and asymmetrical photoluminescence (PL) band, while GaN/AlGaN MQWs and InGaN epilayers emit narrower and Gaussian-shaped PL bands. Furthermore, the decay of excitons at low temperatures in InxGa1-xN/GaN MQWs follows a nonexponential function even at the lower-energy side of the PL spectral peak, while those in GaN/AlGaN MQWs and in InGaN epilayers follow a single exponential function. Both alloy disorder and interface roughness have to be included in order to interpret the PL emission spectrum and the decay dynamics in InxGa1-xN/GaN MQWs. Important parameters of the InxGa1-xN/GaN MQWs, σx, σL, and dτ/dL, denoting the alloy disorder, the interface roughness, and the rate of changing of the exciton decay lifetime with well width, respectively, have been deduced. The method developed here can be used to determine σx, σL, and dτ/dL in any MQW systems with wells being alloy materials. © 1998 American Institute of Physics.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Collective effects of interface roughness and alloy disorder in In<sub>x</sub>Ga<sub>1-x</sub>N/GaN multiple quantum wells</title><author><name sortKey="Zeng, K C" uniqKey="Zeng K">K. C. Zeng</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Department of Physics, Kansas State University, Manhattan, Kansas 66506-2601</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Kansas</region></placeName><wicri:cityArea>Department of Physics, Kansas State University, Manhattan</wicri:cityArea></affiliation></author><author><name sortKey="Smith, M" uniqKey="Smith M">M. Smith</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Department of Physics, Kansas State University, Manhattan, Kansas 66506-2601</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Kansas</region></placeName><wicri:cityArea>Department of Physics, Kansas State University, Manhattan</wicri:cityArea></affiliation></author><author><name sortKey="Lin, J Y" uniqKey="Lin J">J. Y. Lin</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Department of Physics, Kansas State University, Manhattan, Kansas 66506-2601</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Kansas</region></placeName><wicri:cityArea>Department of Physics, Kansas State University, Manhattan</wicri:cityArea></affiliation></author><author><name sortKey="Jiang, H X" uniqKey="Jiang H">H. X. Jiang</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Department of Physics, Kansas State University, Manhattan, Kansas 66506-2601</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Kansas</region></placeName><wicri:cityArea>Department of Physics, Kansas State University, Manhattan</wicri:cityArea></affiliation></author></titleStmt><publicationStmt><idno type="inist">98-0398708</idno><date when="1998-09-21">1998-09-21</date><idno type="stanalyst">PASCAL 98-0398708 AIP</idno><idno type="RBID">Pascal:98-0398708</idno><idno type="wicri:Area/Main/Corpus">016775</idno><idno type="wicri:Area/Main/Repository">015B67</idno></publicationStmt><seriesStmt><idno type="ISSN">0003-6951</idno><title level="j" type="abbreviated">Appl. phys. lett.</title><title level="j" type="main">Applied physics letters</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Excitons</term><term>Experimental study</term><term>Gallium compounds</term><term>Gallium nitrides</term><term>Heterojunctions</term><term>III-V semiconductors</term><term>Indium compounds</term><term>Indium nitrides</term><term>Interface states</term><term>Interface structure</term><term>Interfaces</term><term>Photoluminescence</term><term>Recombination</term><term>Roughness</term><term>Semiconductor quantum wells</term><term>Surface topography</term><term>Theoretical study</term><term>Wide band gap semiconductors</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>7320M</term><term>7340K</term><term>7866F</term><term>7855C</term><term>7135</term><term>6835C</term><term>7320D</term><term>8530V</term><term>Etude expérimentale</term><term>Etude théorique</term><term>Gallium nitrure</term><term>Indium nitrure</term><term>Interface</term><term>Rugosité</term><term>Photoluminescence</term><term>Exciton</term><term>Hétérojonction</term><term>Recombinaison</term><term>Indium composé</term><term>Gallium composé</term><term>Semiconducteur III-V</term><term>Semiconducteur bande interdite large</term><term>Etat interface</term><term>Structure interface</term><term>Topographie surface</term><term>Puits quantique semiconducteur</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">The collective effects of alloy disorder and interface roughness on optical properties of In<sub>x</sub>Ga<sub>1-x</sub>N/GaN multiple quantum wells (MQWs) have been studied. The results are compared with those of GaN/AlGaN MQWs and InGaN epilayers. In<sub>x</sub>Ga<sub>1-x</sub>N/GaN MQWs emit a broad and asymmetrical photoluminescence (PL) band, while GaN/AlGaN MQWs and InGaN epilayers emit narrower and Gaussian-shaped PL bands. Furthermore, the decay of excitons at low temperatures in In<sub>x</sub>Ga<sub>1-x</sub>N/GaN MQWs follows a nonexponential function even at the lower-energy side of the PL spectral peak, while those in GaN/AlGaN MQWs and in InGaN epilayers follow a single exponential function. Both alloy disorder and interface roughness have to be included in order to interpret the PL emission spectrum and the decay dynamics in In<sub>x</sub>Ga<sub>1-x</sub>N/GaN MQWs. Important parameters of the In<sub>x</sub>Ga<sub>1-x</sub>N/GaN MQWs, σ<sub>x</sub>, σ<sub>L</sub>, and dτ/dL, denoting the alloy disorder, the interface roughness, and the rate of changing of the exciton decay lifetime with well width, respectively, have been deduced. The method developed here can be used to determine σ<sub>x</sub>, σ<sub>L</sub>, and dτ/dL in any MQW systems with wells being alloy materials. © 1998 American Institute of Physics.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0003-6951</s0></fA01><fA02 i1="01"><s0>APPLAB</s0></fA02><fA03 i2="1"><s0>Appl. phys. lett.</s0></fA03><fA05><s2>73</s2></fA05><fA06><s2>12</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>Collective effects of interface roughness and alloy disorder in In<sub>x</sub>Ga<sub>1-x</sub>N/GaN multiple quantum wells</s1></fA08><fA11 i1="01" i2="1"><s1>ZENG (K. C.)</s1></fA11><fA11 i1="02" i2="1"><s1>SMITH (M.)</s1></fA11><fA11 i1="03" i2="1"><s1>LIN (J. Y.)</s1></fA11><fA11 i1="04" i2="1"><s1>JIANG (H. X.)</s1></fA11><fA14 i1="01"><s1>Department of Physics, Kansas State University, Manhattan, Kansas 66506-2601</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></fA14><fA20><s1>1724-1726</s1></fA20><fA21><s1>1998-09-21</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>10020</s2></fA43><fA44><s0>8100</s0><s1>© 1998 American Institute of Physics. All rights reserved.</s1></fA44><fA47 i1="01" i2="1"><s0>98-0398708</s0></fA47><fA60><s1>P</s1></fA60><fA61><s0>A</s0></fA61><fA64 i2="1"><s0>Applied physics letters</s0></fA64><fA66 i1="01"><s0>USA</s0></fA66><fC01 i1="01" l="ENG"><s0>The collective effects of alloy disorder and interface roughness on optical properties of In<sub>x</sub>Ga<sub>1-x</sub>N/GaN multiple quantum wells (MQWs) have been studied. The results are compared with those of GaN/AlGaN MQWs and InGaN epilayers. In<sub>x</sub>Ga<sub>1-x</sub>N/GaN MQWs emit a broad and asymmetrical photoluminescence (PL) band, while GaN/AlGaN MQWs and InGaN epilayers emit narrower and Gaussian-shaped PL bands. Furthermore, the decay of excitons at low temperatures in In<sub>x</sub>Ga<sub>1-x</sub>N/GaN MQWs follows a nonexponential function even at the lower-energy side of the PL spectral peak, while those in GaN/AlGaN MQWs and in InGaN epilayers follow a single exponential function. Both alloy disorder and interface roughness have to be included in order to interpret the PL emission spectrum and the decay dynamics in In<sub>x</sub>Ga<sub>1-x</sub>N/GaN MQWs. Important parameters of the In<sub>x</sub>Ga<sub>1-x</sub>N/GaN MQWs, σ<sub>x</sub>, σ<sub>L</sub>, and dτ/dL, denoting the alloy disorder, the interface roughness, and the rate of changing of the exciton decay lifetime with well width, respectively, have been deduced. 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